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US 7,732,251 B2Granted
Method of making a semiconductor device having a multicomponent oxide
AssigneeHewlett-Packard Development Company, L.P.
InventorsRandy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
Life of this patent
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Abstract
One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
Claims18
A method of forming a channel, comprising:
- providing at least one precursor composition that includes one or more precursor compounds that include:
- zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide;
- and
- depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode.
1 more element
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a drain electrode;
- providing a source electrode;
- providing at least one precursor composition that includes one or more precursor compounds of zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide;
- depositing a channel including depositing the precursor composition to form a multicomponent oxide from the precursor composition contacting the drain electrode and the source electrode;
- providing a gate electrode;
- and
- providing a gate dielectric positioned between the gate electrode and the channel.
4 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a drain electrode;
- providing a source electrode;
- providing at least one precursor composition that includes one or more precursor compounds of zinc oxide, cadmium oxide, gallium oxide, indium oxide, zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide;
- depositing a channel including depositing the precursor composition to form a multicomponent oxide from the precursor composition contacting the drain electrode and the source electrode;
- providing a gate electrode;
- and
- providing a gate dielectric positioned between the gate electrode and the channel, wherein the precursor composition includes one or more precursor compounds that include Ax, one or more precursor compounds that include Bx, and one or more precursor compounds that include Cx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, and C are different.
4 more elements
Dependencies are inferred from the claim text.