Metal line pattern of semiconductor device and method of forming the same
AssigneeDongbu HiTek Co., Ltd.
InventorIn Cheol Baek
Life of this patent
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Abstract
A method of forming a metal line pattern for a semiconductor device is provided. The method includes forming a preliminary structure on a semiconductor substrate, having a lower barrier metal layer, a metal layer, and an upper barrier and/or passivation layer having a first thickness; removing a top surface of the passivation layer so that the passivation layer has a second thickness; forming a sub-passivation layer on the passivation layer; forming an adhesion promoter and a photoresist pattern on the sub-passivation layer; and forming a metal line pattern by etching the preliminary structure using the photoresist pattern as an etching mask.
Claims18
A method of forming a metal line pattern, comprising:
- forming a preliminary structure on a semiconductor substrate, the preliminary structure having a lower barrier metal layer, a metal layer, and an upper barrier and/or passivation layer having a first thickness;
- removing a top surface of the upper barrier and/or passivation layer so that the upper barrier and/or passivation layer has a second thickness;
- forming a sub-passivation layer on the upper barrier and/or passivation layer having the second thickness;
- forming an adhesive force enhancing layer on the sub-passivation layer;
- forming a photoresist pattern on the adhesive force enhancing layer;
- and
- forming a metal line pattern by etching the preliminary structure using the photoresist pattern as an etching mask.
Dependencies are inferred from the claim text.