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US 7,732,103 B2Granted
Photomask, focus measurement apparatus and focus measurement method
AssigneeFujitsu Semiconductor Limited
InventorTeruyoshi Yao
Life of this patent
Estimating the term…
Abstract
A test photomask includes a first mask pattern and a second mask pattern formed at a center portion of the first mask pattern thereon. The first mask pattern is a pattern with light condensing effect and a nature in which an exposure-dose amount to a transfer object varies in dependence on a focus variation, which is a two-dimensional Fresnel zone pattern here.
Claims19
A focus measurement apparatus comprising:
- a photomask including a first mask pattern with light condensing effect of which exposure-dose amount to a transfer object varies in dependence on a focus variation and a second mask pattern for size measurement formed to be projected to a light-condensed portion of the first mask pattern when exposed,
- a memory storing data indicating a relation between a size of a transferred pattern of the second mask pattern obtained using said photomask and a focus variation amount;
- and
- a focus variation amount specifying unit specifying the focus variation amount by making use of a fact that the size of the transferred pattern of the second mask pattern varies based on variation in the exposure-dose amount from the first mask pattern arising in dependence on the focus variation and by checking the measured size value with the data stored in said memory.
1 more element
A focus measurement apparatus comprising:
- a photomask including a Fresnel zone pattern with light condensing effect by diffraction, an exposure-dose amount of the Fresnel zone pattern to a transfer object varying in dependence on a focus variation;
- a memory storing data indicating a relation between a film thickness of a resist film being the transfer object from the Fresnel zone pattern obtained using said photomask and a focus variation amount;
- and
- a focus variation amount specifying unit specifying the focus variation amount by making use of a fact that the exposure-dose amount to a resist film depends on the focus variation and the film thickness of the resist film after development process depends on the exposure-dose amount and by checking a measured film thickness value of the resist film with the data stored in said memory.
1 more element
A focus measurement apparatus comprising:
- a photomask including a Fresnel zone pattern with light condensing effect by diffraction formed thereon, an exposure-dose amount of the Fresnel zone pattern to a transfer object varying in dependence on a focus variation;
- an exposure-dose amount measurement unit measuring the exposure-dose amount from the Fresnel zone pattern;
- a memory storing data indicating a relation between the exposure-dose amount obtained using said photomask and said exposure-dose amount measurement unit and a focus variation amount;
- and
- a focus variation amount specifying unit specifying the focus variation amount by making use of a fact that the exposure-dose amount from the Fresnel zone pattern depends on the focus variation and by checking a measured value of the exposure-dose amount by said exposure-dose amount measurement unit with the data stored in said memory.
2 more elements
A focus measurement method comprising:
- using a photomask including a first mask pattern with light condensing effect of which exposure-dose amount to a transfer object varies in dependence on a focus variation and a second mask pattern for size measurement formed to be projected to a light condensed portion of the first mask pattern when exposed;
- storing data indicating a relation between a size of a transferred pattern of the second mask pattern obtained using said photomask and a focus variation amount, in a memory;
- and
- specifying the focus variation amount while making use of a fact that the size of the transferred pattern of the second mask pattern varies caused by variation in the exposure-dose amount from the first mask pattern arising in dependence on the focus variation and by checking the measured size value with the data stored in said memory.
1 more element
A focus measurement method comprising:
- using a photomask including a Fresnel zone pattern with light condensing effect formed thereon, an exposure-dose amount of the Fresnel zone pattern to a transfer object varying in dependence on a focus variation,
- storing data indicating a relation between a film thickness of a resist film being the transfer object from the Fresnel zone pattern obtained using said photomask and a focus variation amount, in a memory;
- and
- specifying the focus variation amount while making use of a fact that the exposure-dose amount from the Fresnel zone pattern to a resist film depends on the focus variation and at the same time the film thickness of the resist film after development depends on the exposure-dose amount, and by checking a measured film thickness value of the resist film with the data stored in said memory.
1 more element
A focus measurement method comprising:
- measuring an exposure-dose amount from a Fresnel zone pattern with light condensing effect by diffraction using a photomask including the Fresnel zone pattern formed thereon, the exposure-dose amount of the Fresnel zone pattern varying in dependence on a focus variation;
- storing data indicating a relation between the exposure-dose amount obtained by said measuring the exposure-dose amount with using said photomask and a focus variation amount, in a memory;
- and
- specifying the focus variation amount by making use of a fact that the exposure-dose amount from the Fresnel zone pattern depends on the focus variation and by checking the measured value of the exposure-dose amount with the data stored in said memory.
1 more element
Dependencies are inferred from the claim text.