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US 7,732,102 B2Granted
Cr-capped chromeless phase lithography
AssigneeFreescale Semiconductor, Inc.
InventorsJonathan L. Cobb, Bernard J. Roman, Wei E. Wu
Life of this patent
Estimating the term…
Abstract
A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed thereon. The mask is utilized to impart the pattern to a layer over a semiconductor substrate.
Claims15
A method for imparting a pattern to a substrate, comprising:
- providing a photolithographic mask adapted for use in imparting a pattern to a substrate, wherein the pattern comprises a plurality of features, and wherein at least one of the plurality of features is implemented in the mask as a phase shifting structure with a unitary layer of opaque material disposed thereon;
- and
- utilizing the mask to impart the pattern to a substrate;
- wherein the photolithographic mask comprises a first set of mask features adapted to produce features having a critical dimension CD within the range of 0<k≦CD<m, where k and in are real number dimensions, wherein the first set of mask features includes a plurality of phase shifting structures, and wherein each of the phase shifting structures has a unitary layer of chrome disposed thereon which is co-continuous with the phase-shifting structures;
- and wherein the photolithographic mask further comprises a second set of mask features adapted to produce device features having a critical dimension CD<k, and a third set of mask features adapted to produce device features having a critical dimension CD≧m.
2 more elements
A method for imparting a pattern to a substrate, comprising:
- providing a photolithographic mask adapted for use in imparting a pattern to a substrate, wherein the pattern comprises a plurality of features, and wherein the photolithographic mask comprises (a) a first set of mask features adapted to produce pattern features having a critical dimension CD within the range of 0<k≦CD<m, where k and m are real number dimensions, wherein the first set of mask features includes a plurality of phase shifting structures, and wherein each of the phase shifting structures has a unitary layer of opaque material disposed thereon which is co-continuous with the phase-shifting structures, (b) a second set of mask features adapted to produce pattern features having a critical dimension CD<k, and (c) a third set of mask features adapted to produce pattern features having a critical dimension CD≧m and
- utilizing the mask to impart the pattern to a layer of photoresist disposed on a semiconductor substrate.
A photolithographic mask, comprising:
- “(a) a first set of mask features adapted to produce device features having a critical dimension CD within the range of 0<k≦CD<m, where k and m are real number dimensions, wherein the first set of mask features includes a plurality of phase shifting structures, wherein each of said phase shifting structures has a unitary layer of chrome disposed thereon which is co-continuous with the phase-shifting structures, (b) a second set of mask features adapted to produce device features having a critical dimension CD<k;
- and a third set of mask features adapted to produce device features having a critical dimension CD>m, wherein the second set of mask features includes chromeless phase shifting structures, and wherein the third set of mask features includes chrome structures.”
Dependencies are inferred from the claim text.