Rhombohedral fluoroberyllium borate crystals and hydrothermal growth thereof for use in laser and non-linear optical applications and devices
AssigneeClemson University
InventorsJoseph W Kolis, Colin D. McMillen
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Abstract
Single, acentric, rhombohedral, fluoroberyllium borate crystals of a size sufficient for use in a variety of laser and non-optical applications are formed by a hydrothermal method.
Claims14
A method for making rhombohedral fluoroberyllium borate crystals having the formula MBe2BO3F2 (MBBF) wherein M is Rb, Cs, or Tl, comprising the steps of:
- providing microcrystalline MBe2BO3F2 powder, wherein M is Rb, Cs, Tl;
- and
- recrystallizing the microcrystalline MBe2BO3F2 in an aqueous solution at a temperature of from about 300° C. to about 600° C. and at a pressure of from about 4 kpsi to about 30 kpsi, the aqueous solution comprising fluoride ions at a concentration of from about 1×10−6 to about 5 molarity.
A method for making rhombohedral fluoroberyllium borate crystals having the formula MBe2BO3F2 (MBBF) wherein M is Rb, Cs, or Tl, comprising the steps of:
- reacting MBF4, BeO, and a borate selected from the group consisting of B2O3 and H3BO3 in an aqueous solution at a temperature of from about 300° C. to about 600° C. and at a pressure of from about 8 kpsi to about 40 kpsi, the aqueous solution further containing fluoride ions at a concentration of from about 0.01 to about 5 molarity.
A method for making rhombohedral fluoroberyllium borate crystals having the formula MBe2BO3F2 (MBBF) wherein M is Rb, Cs, or Tl, comprising the steps of:
- providing a pressure vessel having a growth region and a nutrient region;
- providing a seed crystal having the formula MBe2BO3F2 wherein M is Rb, Cs, or Tl,
- positioning the seed crystal in the growth region of the pressure vessel;
- providing a medium comprising a nutrient and a mineralizer in the nutrient region, the nutrient comprising powdered or microcrystalline MBe2BO3F2, the mineralizer comprising fluoride ions;
- and
- heating and pressurizing the vessel such that a growth temperature is produced in the growth region, a nutrient temperature is produced in the nutrient region, and a temperature gradient is produced between the growth region and the nutrient region, whereby growth of the crystal is initiated, the growth temperature ranging from about 300° C. to about 500° C., the nutrient temperature ranging from about 450° C. to about 600° C., the nutrient temperature being higher than the growth temperature and the pressure ranging from about 8 kpsi to about 40 kpsi.
Dependencies are inferred from the claim text.