Method for forming photoresist layer
AssigneeUnited Microelectronics Corp.
InventorsYu-Huan Liu, Chih-Jung Chen, Chih-Chung Huang
Life of this patent
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Abstract
A method for forming a photoresist layer is provided. The method includes following steps. A wafer is provided in a semiconductor machine. The wafer is spun at a first spin speed. A pre-wet solvent is dispensed on the spinning wafer by using a nozzle disposed at a fixed position. The pre-wet solvent then stops dispensing. The spin speed of the wafer is adjusted from the first spin speed to a second spin speed which is faster than the first spin speed. Thereafter, a photoresist layer is coated on the wafer.
Claims17
A method for forming a photoresist layer, comprising:
- providing a wafer in a semiconductor machine;
- spinning the wafer at a first spin speed;
- dispensing a pre-wet solvent on the spinning wafer by using a nozzle disposed at a fixed position;
- stopping dispensing the pre-wet solvent;
- adjusting the spin speed of the wafer from the first spin speed to a second spin speed, consisting of adjusting the first spin speed to a third spin speed and then adjusting the third spin speed to the second spin speed, the second spin speed being faster than the first spin speed, the third spin speed being slower or faster than the first spin speed and the third spin speed being slower than the second spin speed;
- and
- coating a photoresist layer on the wafer.
A method for forming a photoresist layer, comprising:
- providing a wafer in a semiconductor machine;
- spinning the wafer at a predetermined spin speed;
- dispensing a pre-wet solvent on the spinning wafer by using a nozzle disposed at a fixed position;
- and
- stopping dispensing the pre-wet solvent directly followed by coating a photoresist layer on the wafer.
Dependencies are inferred from the claim text.