Proximity effect correction with regard to a semiconductor circuit design pattern

A computer-readable storage device storing a pattern correction program for performing proximity effect correction with regard to a design pattern, said pattern correction program causing a computer to perform the steps of:

• performing optical proximity effect correction by calculating a two-dimensional model-based optical proximity effect correction for each of a plurality of sampling points set on at least one pattern edge which forms the design pattern;
• performing process proximity effect correction calculation by weighting with a two-dimensional distribution of the pattern edge around each sampling point;
• said weighting being performed such that a high weight is applied to a region in which reaction products which can have an influence on the sampling point are produced but a low weight is applied to any other region,
• wherein:
• said step of performing optical proximity effect correction uses, in a function to be used for the correction calculation by the two-dimensional model-based optical proximity effect correction, a peripheral pattern area density value as an argument and integrates an integration kernel produced arbitrarily and a peripheral pattern distribution to calculate the peripheral pattern area density value, and then reflects an influence of the weighting on a result of the calculation.

A pattern correction method for performing proximity effect correction with regard to a design pattern, said method comprising the steps of:

• performing optical proximity effect correction by calculating a two-dimensional model-based optical proximity effect correction for each of a plurality of sampling points set on at least one pattern edge which forms the design pattern;
• performing process proximity effect correction calculation by weighting with a two-dimensional distribution of the pattern edge around each sampling point;
• said weighting being performed such that a high weight is applied to a region in which reaction products which can have an influence on the sampling point are produced but a low weight is applied to any other region,
• wherein:
• said step of performing optical proximity effect correction uses, in a function to be used for the correction calculation by the two-dimensional model-based optical proximity effect correction, a peripheral pattern area density value as an argument and integrates an integration kernel produced arbitrarily and a peripheral pattern distribution to calculate the peripheral pattern area density value, and then reflects an influence of the weighting on a result of the calculation using a computer.

A fabrication method for a semiconductor device, comprising the steps of:

• performing optical proximity effect correction by calculating two-dimensional model-based optical proximity effect correction for each of a plurality of sampling points set on at least one pattern edge which forms a design pattern to be used to form a semiconductor circuit pattern;
• performing process proximity effect correction calculation by weighting with a two-dimensional distribution of the pattern edge around each sampling point;
• said weighting being performed such that a high weight is applied to a region in which reaction products which can have an influence on the sampling point are produced but a low weight is applied to any other region;
• and
• forming said semiconductor circuit pattern after performing both the optical proximity effect correction and the process proximity effect correction,
• wherein:
• said step of performing optical proximity effect correction uses, in a function to be used for the correction calculation by the two-dimensional model-based optical proximity effect correction, a peripheral pattern area density value as an argument and integrates an integration kernel produced arbitrarily and a peripheral pattern distribution to calculate the peripheral pattern area density value, and then reflects an influence of the weighting on a result of the calculation using a computer.