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US 7,682,984 B2Granted
Interferometer endpoint monitoring device
AssigneeApplied Materials, Inc.
InventorsKhiem K. Nguyen, Peter Satitpunwaycha, Alfred W. Mak
Life of this patent
Estimating the term…
Abstract
A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
Claims19
A method for monitoring substrate etching process, comprising:
- placing a substrate having one or more test patterns disposed on a peripheral region of the substrate in a square opening of a substrate support in a plasma etching chamber, the substrate support having an endpoint detection system disposed therein, the endpoint detection system disposed in a plurality of locations within a quadrilateral band, wherein at least one of the plurality of locations is in a corner of the square opening;
- etching one or more of the test patterns;
- and
- detecting a predetermined endpoint of the etching step by sensing a change in a characteristic of the one or more test patterns from a backside of the substrate by the endpoint detection system.
1 more element
A method for monitoring substrate etching process:
- placing a substrate on center of a substrate support disposed in a plasma etching chamber, the substrate support having an endpoint detection system positioned in a corner of a square substrate receiving opening of the substrate support in a position to view a backside of the substrate through the substrate support;
- etching the substrate in the processing chamber;
- and
- optically detecting an endpoint of the etching step from one or more test patterns disposed on a periphery region of the substrate from the backside of the substrate using the endpoint detection system.
1 more element
A method for monitoring substrate etching process, comprising:
- placing a square substrate having one or more test patterns disposed on a periphery region of the substrate on a substrate support having an adapter having a square substrate receiving pocket, the substrate support having an endpoint detection system disposed in a peripheral portion of the substrate support;
- etching one or more of the test patterns disposed on the substrate support in a plasma etching chamber;
- directing light from the endpoint detection system through the pocket of the adapter to the test patterns through a bottom surface of the substrate, wherein the light is directed to the substrate from a corner of the adapter and from a location along an edge of the adapter;
- measuring a reflected light from the test patterns to the endpoint detection system;
- and
- determining an etch endpoint from the measured reflected light.
3 more elements
Dependencies are inferred from the claim text.