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US 7,682,983 B2Granted
Manufacturing method of electronic device with resist ashing
AssigneeFujitsu Microelectronics Limited
InventorsHikaru Kokura, Kenji Nukui, Shinji Fukuta, Tadashi Oshima, Fukashi Harada, Tatsuro Kawabata
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Abstract
A manufacturing method of an electronic device, includes the steps of: implanting P (phosphorous) ions into a substrate semiconductor region made of Si or SiGe by using a resist as a mask; ashing the resist while it is heated in a vacuum environment; and taking out the substrate, the substrate being ashing processed so that a temperature of the substrate is equal to or less than 130° C.
Claims16
A manufacturing method of an electronic device, comprising:
- implanting P (phosphorous) ions into a substrate semiconductor region made of Si or SiGe by using a resist as a mask;
- ashing the resist while it is heated in a vacuum environment;
- taking out the substrate, the substrate being ashing processed so that a temperature of the substrate is equal to or less than 130° C;
- and
- modifying the surface of the semiconductor region to be water repellent in the vacuum environment, after the ashing and before the taking out the substrate.
2 more elements
Dependencies are inferred from the claim text.