Method to improve profile control and N/P loading in dual doped gate applications

A method for decreasing etch rate micro-loading between differently doped material of a substrate, comprising:

• striking a plasma in a chamber;
• etching a dual doped gate structure of the substrate, wherein the dual doped gate structure includes a n-doped polysilicon gate and a p-doped polysilicon gate, wherein the n-doped polysilicon gate and the p-doped polysilicon gate are contemporaneously etched;
• forming a passivation layer from byproducts generated from the etching of the dual doped gate structure;
• and
• enhancing the passivation layer, wherein the enhancing includes providing a silicon containing gas from a solid silicon source disposed within the chamber.