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US 7,682,925 B2Granted
Capacitor and manufacturing method thereof
AssigneeDongbu Electronics Co., Ltd.
InventorNam Joo Kim
Life of this patent
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Abstract
The disclosure concerns a capacitor including a trench; an insulation layer; a first polysilicon layer; a first patterned dielectric layer; a second polysilicon layer patterned into a plurality of vertical bars in the trench; a second dielectric layer along surfaces of the first dielectric layer and the second patterned polysilicon layer; and a third polysilicon layer on the second dielectric layer.
Claims18
A method of manufacturing a capacitor, comprising:
- forming a trench by etching part of a silicon substrate;
- depositing in turn an insulation layer, a first polysilicon layer, and a first dielectric layer on the silicon substrate;
- patterning the first dielectric layer to expose a portion of the first polysilicon layer and in the exposed portion of the first polysilicon layer;
- depositing a second polysilicon layer on the first dielectric layer and in the exposed portion of the first polysilicon layer;
- forming a plurality of separated vertical bars in the trench by patterning the second polysilicon layer;
- depositing a conformal second dielectric layer along surfaces of the first dielectric layer and the plurality of separated vertical bars of the second polysilicon layer;
- and
- depositing and patterning a third polysilicon layer on the second dielectric layer.
5 more elements
Dependencies are inferred from the claim text.