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US 7,682,913 B1Granted
Process for making a MCSFET
AssigneeInternational Business Machines Corporation
InventorsXu Ouyang, Louis Lu-Chen Hsu, Xinhui Wang, Haizhou Yin
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Abstract
A process for making a MCSFET includes providing a first implant through a first side of an elongated stack, and then providing a second implant through a second side of the stack. The first implant has a dose different than the dose of the second implant, so that final dopant concentrations in the first and second sides differ and the transistor has two threshold voltages Vt1, Vt2.
Claims17
A method, comprising:
- providing a substrate having formed thereon an elongated stack, the stack having a first sidewall facing in a first direction and a second sidewall facing in a second direction, the first direction differing from the second direction by approximately 180°;
- providing a first implant having a first dose through the first sidewall, and
- providing a second implant having a second dose through the second sidewall of the stack, the second dose creating a dopant concentration in the second sidewall which is greater than a dopant concentration created by the first dose in the first sidewall,
- resulting in a single transistor with two distinctly different threshold voltages, or a MCSFET (Multiple Conduction State Field Effect Transistor).
1 more element
Dependencies are inferred from the claim text.