Method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKatsuaki Natori, Masayuki Tanaka, Akihito Yamamoto, Katsuyuki Sekine, Ryota Fujitsuka, Daisuke Nishida, Yoshio Ozawa
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Abstract
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.
Claims8
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film,
- wherein forming the second insulating film comprises:
- forming an insulating film containing oxygen and a metal element;
- and
- forming an insulating film containing silicon on the insulating film containing oxygen and the metal element using source gas not containing chlorine.
Dependencies are inferred from the claim text.