Pattern formation method using Levenson-type mask and method of manufacturing Levenson-type mask
AssigneeRenesas Technology Corp.
InventorsMitsuru Okuno, Akemi Moniwa
Life of this patent
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Abstract
A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
Claims8
A method of manufacturing a Levenson-type mask including a transparent substrate and a light shielding film arranged on a main surface of said transparent substrate and having a plurality of opening portions, said opening portions including a same phase opening portion and a reverse phase opening portion, said reverse phase opening portion having a concave portion formed in said main surface, said concave portion having an undercut portion formed to extend to below an end portion of said reverse phase opening portion, said same phase opening portions and said reverse phase opening portions being set in pairs to form a first pattern in a processed object, comprising:
- an opening portion setting step of defining said same phase opening portion and said reverse phase opening portion on opposite sides of said first pattern;
- determining a distance between said pairs;
- setting said same phase opening portion in at least one of said opening portions that form said pairs opposed to each other if a distance between said pairs is less than or equal to a prescribed distance.
A method of manufacturing a Levenson-type mask for use in manufacturing a semiconductor device having a first pattern formed in an active region of an element region and a second pattern formed in an element isolation region, comprising
- an opening portion setting step of setting a same phase opening portion and a reverse phase opening portion as an opening portion on opposite sides of said first pattern, wherein
- when said second pattern is arranged between regions exposed through said opening portions and a distance between a region exposed through said opening portion and said second pattern is less than a prescribed distance, said opening portion setting step includes
- after said step of setting said same phase opening portion and said reverse phase opening portion on opposite sides of said first pattern, a step of setting said same phase opening portion of one adjacent said first pattern and said reverse phase opening portion of an other adjacent said first pattern on opposite sides of said second pattern, and
- after said step of setting said same phase opening portion of one adjacent said first pattern and said reverse phase opening portion of an other adjacent said first pattern on opposite sides of the second pattern, an expansion step of expanding at least one of said same phase opening portion of said one adjacent said first pattern and said reverse phase opening portion of said other adjacent said first pattern to allow formation of said second pattern.
Dependencies are inferred from the claim text.