Anti-aberration pattern and method for manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorsChao-Lung Lo, Tzong-Hsien Wu
Life of this patent
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Abstract
The invention is directed to a pattern on a mask. The pattern comprises a main dense pattern, a first anti-aberration pattern and a second anti-aberration pattern. The main dense pattern comprises a first outmost sub-pattern and a second outmost sub-pattern, wherein the first outmost sub-pattern and the second pattern are not adjacent to each other. The first anti-aberration pattern is located adjacent to the first outmost sub-pattern with a first distance. The second anti-aberration pattern is located adjacent to the second outmost sub-pattern with a second distance, wherein the first distance and the second distance are different from each other.
Claims13
A pattern on a mask, comprising:
- a main dense pattern comprising a first outmost sub-pattern and a second outmost sub-pattern, wherein the main dense pattern is a line-space pattern and the first outmost sub-pattern and the second outmost sub-pattern are not adjacent to each other;
- a single first anti-aberration pattern located adjacent to the first outmost sub-pattern with a first distance;
- and
- a single second anti-aberration pattern located adjacent to the second outmost sub-pattern with a second distance, wherein the first distance and the second distance are different from each other.
An anti-aberration pattern for eliminating an aberration effect on a first dense pattern and a second dense pattern, wherein the first dense pattern and the second dense pattern are line-space patterns adjacent to each other, the anti-aberration pattern comprising:
- a first sub-pattern located between the first dense pattern and the second dense pattern, wherein the first sub-pattern is adjacent to the first dense pattern with a first distance;
- and
- a second sub-pattern located between the first sub-pattern and the second dense pattern, wherein the second sub-pattern is adjacent to the second dense pattern with a second distance and the first distance is different from the second distance.
A method for eliminating an aberration influence on a dense pattern of a mask, wherein the dense pattern comprises at least two edge features including a first edge feature and a second edge feature and the width of the first edge feature is equal to that of the second edge feature, the method comprising:
- determining a developed critical dimension of the dense pattern, wherein the dense pattern is a line-space pattern;
- and
- forming an anti-aberration pattern comprising a first sub-pattern and a second sub-pattern on the mask, wherein the first sub-pattern is located adjacent to the first edge feature with a first distance, the second sub-pattern is located adjacent to the second edge feature with a second distance and the first distance and the second distance are different.
Dependencies are inferred from the claim text.