Cluster tool process chamber having integrated high pressure and vacuum chambers

A method for cleaning a wafer in a process chamber of a cluster tool having a transfer chamber connected to the process chamber, the process chamber including a high pressure chamber adjustable between an open position in which a wafer may be inserted or removed and a closed position in which said wafer may be cleaned, the method comprising:

• introducing the wafer into the high pressure chamber from the transfer chamber, when the high pressure chamber is open and the transfer chamber and the process chamber share a common vacuum;
• closing a first valve after introducing the wafer into the process chamber from the transfer chamber, the first valve being located between the transfer chamber and the process chamber;
• creating a first vacuum level in the transfer chamber;
• closing the high pressure chamber to thereby form a first space in which said wafer is present, and a second space between the closed high pressure chamber and walls of the process chamber;
• creating a second vacuum level in the second space, the second vacuum level in the second space having a lower vacuum pressure than the first vacuum level in the transfer chamber;
• introducing a fluid or gas into the first space of the high pressure chamber for cleaning the wafer at a pressure above atmospheric pressure;
• removing at least some of said fluid or gas from the high pressure chamber while the high pressure chamber is in the closed position;
• opening the high pressure chamber while the first valve is closed;
• equalizing pressure between the process chamber and the transfer chamber;
• and
• removing the wafer via the transfer chamber.

A method for cleaning a wafer in a process chamber that is connected via a first valve to a transfer chamber of a cluster tool, the process chamber including a high pressure chamber adjustable between an open position in which a wafer may be inserted or removed and a closed position in which said wafer may be processed, the method comprising:

• introducing the wafer into the high pressure chamber from the transfer chamber when the first valve and the high pressure chamber are both open and the transfer chamber and the process chamber share a common vacuum;
• closing the first valve to isolate the transfer chamber from the process chamber;
• creating a first vacuum level in the transfer chamber;
• closing the high pressure chamber to form a first space therein and also a second space between the closed high pressure chamber and walls of the process chamber;
• creating a second vacuum level in the second space between the closed high pressure chamber and walls of the process chamber, the second vacuum level in the second space having a lower vacuum pressure than the first vacuum level in the transfer chamber;
• introducing a fluid or gas into the first space of the high pressure chamber and processing the wafer at a pressure above atmospheric pressure;
• venting the high pressure chamber while the high pressure chamber is in the closed position and then closing the vent;
• opening the high pressure chamber while the first valve is closed;
• equalizing pressure between the process chamber and the transfer chamber, after the high pressure chamber is opened;
• opening the first valve;
• and
• removing the wafer via the transfer chamber.