Mask data generation method and mask
AssigneeElpida Memory, Inc.
InventorsNobue Kosa, Tadao Yasuzato
Life of this patent
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Abstract
In a mask data generation method, when auxiliary patterns are arranged with respect to a device pattern, an arrangement rule for a tip of the device pattern is designed to be different from that for other portions. For portions that are corrected to a large extent by an OPC process, such as the tip of the device pattern, an auxiliary pattern is spaced at an increased distance from the device pattern. Specifically, a distance at which an auxiliary pattern is spaced from the tip of the device pattern is set to be longer than a distance at which an auxiliary pattern is spaced from a long side of the device pattern.
Claims20
A mask data generation method, comprising:
- arranging first and second auxiliary patterns adjacent to a device pattern, and
- performing, by a computer, an optical proximity correction (OPC) process,
- wherein a first distance at which the first auxiliary pattern is spaced from a short side of the device pattern is set to be longer than a second distance at which the second auxiliary pattern is spaced from a long side of the device pattern upon arranging auxiliary patterns.
A mask data generation method, comprising:
- arranging first and second auxiliary patterns adjacent to a device pattern, and
- performing, by a computer, an optical proximity correction (OPC) process,
- wherein a first distance at which the first auxiliary pattern is spaced from a first side of the device pattern is set to be longer than a second distance at which the second auxiliary pattern is spaced from a second side of the device pattern upon arranging auxiliary patterns.
A mask, comprising:
- first and second auxiliary patterns being arranged adjacent to a device pattern,
- wherein a first distance at which the first auxiliary pattern is spaced from a first side of the device pattern is set to be longer than a second distance at which the second auxiliary pattern is spaced from a second side of the device pattern upon arranging auxiliary patterns.
Dependencies are inferred from the claim text.