Semiconductor memory device controlling program voltage according to the number of cells to be programmed and method of programming the same
AssigneeSamsung Electronics Co., Ltd.
InventorSeung-Won Lee
Life of this patent
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Abstract
A semiconductor memory device controlling a program voltage according to the number of cells to be programmed and a method of programming the same. The semiconductor memory device includes a memory cell array. A write data buffer receives write data in a predetermined unit. A program cell counter calculates the amount of data, from the write data, to be programmed in the memory cell array. A program voltage generator outputs a program voltage to be applied to the memory cell array, in accordance with the amount of data to be programmed, at a time, in the memory cell array. The program voltage is controlled in accordance with the number of memory cells to be programmed.
Claims16
A semiconductor memory device comprising:
- a memory cell array;
- a program voltage generator outputting a program voltage to the memory cell array, the level of the program voltage is dependent upon a number of memory cells to be programmed at the same time;
- a program cell counter calculating the number of memory cells to be programmed at the same time;
- wherein the program voltage generator comprises a voltage regulator configured to control the level of the program voltage depending upon the number of memory cells to be programmed at the same time;
- and
- wherein the voltage regulator controls the level of the program voltage by voltage division.
A semiconductor memory device comprising:
- a memory cell array;
- a write data buffer receiving write data in a predetermined unit;
- a program cell counter calculating an amount of data, from the write data, to be programmed in the memory cell array at the same time;
- and
- a program voltage generator outputting a program voltage to the memory cell array, wherein the level of the program voltage is dependent upon the amount of data to be programmed at the same time;
- wherein the program voltage generator comprises a voltage regulator controlling an operation of a charge pump depending upon the amount of data to be programmed at the same time;
- and a driver receiving an output voltage from the charge pump and providing the output voltage as the program voltage to the memory cell array.
A method of programming a semiconductor memory device, comprising:
- receiving write data in a predetermined unit;
- counting the amount of data, from the write data, to be programmed in a memory cell array at the same time;
- adjusting a level of a program voltage applied to the memory cell array depending upon the amount of data to be programmed at the same time;
- controlling an operation of a charge pump depending upon the amount of data to be programmed at the same time;
- and
- receiving an output voltage from the charge pump and providing the output voltage as the program voltage to the memory cell array.
Dependencies are inferred from the claim text.