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US 7,679,958 B2Granted
Nonvolatile memory device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorByong-Kook Kim
Life of this patent
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Abstract
A nonvolatile memory device includes a plurality of strings each of which is configured with a first select transistor, a second select transistor, and a plurality of memory cells connected in series between the first and second select transistors. A common source line is connected to a source of the second select transistor. A metal interconnection is electrically insulated from the common source line, and connected to the source of the second select transistor.
Claims7
A method for fabricating a nonvolatile memory device, the method comprising:
- forming a first select transistor, a second select transistor, and a plurality of memory cells over a substrate;
- forming a common source line to be connected to a source of the second select transistor;
- and
- forming a metal interconnection connected to the source of the second select transistor and electrically insulated from the common source line.
1 more element
Dependencies are inferred from the claim text.