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US 7,679,142 B2Granted
Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTatsuya Ohguro
Life of this patent
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Abstract
A semiconductor wafer includes a semiconductor bulk; a first insulating layer formed on the semiconductor bulk; a first semiconductor layer formed on the first insulating layer; a second insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the second insulating layer.
Claims6
A semiconductor device comprising:
- a semiconductor bulk;
- a first insulating layer formed on the semiconductor bulk;
- a first semiconductor layer formed on the first insulating layer;
- a first transistor formed in a first region of the first semiconductor layer;
- a second insulating layer formed on a second region of the first semiconductor layer;
- a second semiconductor layer formed on the second insulating layer;
- a second transistor formed on the second semiconductor layer;
- a first element-isolating layer provided on a periphery of the first transistor;
- and
- a second element-isolating layer provided on a periphery of the second transistor,
- wherein the first and the second element-isolating layers do not reach the first insulating layer, and
- wherein the second element-isolating layer reaches the second insulating layer.
9 more elements
Dependencies are inferred from the claim text.