Non-planar silicon-on-insulator device that includes an “area-efficient” body tie
AssigneeHoneywell International Inc.
InventorsBradley J. Larsen, Michael S. Liu, Paul S. Fechner
Life of this patent
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Abstract
Non-planar SOI devices that include an “area-efficient” body tie are disclosed. The device includes a bulk substrate, an insulator layer formed on a surface of the bulk substrate, and a silicon body formed on a surface of the insulator layer. The silicon body preferably includes (i) a non-planar channel connecting a source region and a drain region, and (ii) a body tie that is adjacent to the channel and couples the channel to a voltage potential. The device further includes a gate dielectric formed on the channel and a gate material formed on the gate dielectric.
Claims16
A non-planar silicon-on-insulator (SOI) device, comprising:
- a bulk substrate;
- an insulator layer formed on a surface of the bulk substrate;
- an active region comprised of:
- a silicon body formed on a surface of the insulator layer, wherein the silicon body includes a source region and a drain region connected by a non-planar channel;
- a body tie region, wherein the body tie region physically borders the non-planar channel and at least one of the source region and drain region via a planar channel to form a junction, the planar channel comprised of a thin layer of silicon on the surface of the insulator, wherein the thin layer of silicon is less than approximately half as thick as the silicon body;
- a gate dielectric formed on the non-planar channel;
- and
- a gate material formed on the gate dielectric.
A non-planar silicon-on-insulator (SOI) device that includes a non-planar channel connecting a source region and a drain region, wherein the non-planar channel is capacitively coupled to a gate material, the device comprising:
- a planar channel comprised of a thin layer of silicon on the insulator, the planar channel physically connecting a body tie region to the non-planar channel and at least one of the source and the drain region to form a junction, wherein the thin layer is less than approximately half as thick as the body tie region.
Dependencies are inferred from the claim text.