Split gate type non-volatile memory device and method of manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorJin Hyo Jung
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Abstract
A non-volatile memory device (e.g., a split gate type device) and a method of manufacturing the same are disclosed. The memory device includes an active region on a semiconductor substrate, a pair of floating gates above the active region, a charge storage insulation layer between each floating gate and the active region, a pair of wordlines over the active region and partially overlapping the floating gates, respectively, and a gate insulation film between each wordline and the active region. The method may prevent or reduce the incidence of conductive stringers on the active region between the floating gates, to thereby improve reliability of the memory devices and avoid the active region resistance from being increased due to the stringer.
Claims19
A method of manufacturing a non-volatile memory device, comprising:
- sequentially forming a charge storage layer and a first conductive film on an active region of the non-volatile memory device, wherein the charge storage layer comprises an ONO layer;
- patterning the first conductive film to form a first conductive film pattern;
- removing a first exposed portion of the charge storage layer;
- forming a conformal second conductive film over the whole first conductive film pattern;
- forming a photoresist pattern on the second conductive film, the photoresist pattern having an opening over the active region;
- etching the second conductive film and the first conductive film pattern in the opening using the photoresist pattern as an etching mask to thereby form a pair of control gates from the first conductive film pattern;
- removing a second exposed portion of the charge storage layer in the opening such that the charge storage layer and the first conductive film pattern are substantially co-extensive;
- and
- forming a pair of wordlines by patterning the second conductive film such that the wordlines are over an uppermost surface of the first conductive film pattern and horizontally adjacent to a sidewall of the first conductive film pattern.
Dependencies are inferred from the claim text.