Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structure
AssigneeQimonda AG
InventorsJurgen Amon, Jurgen Faul, Thomas Ruder, Thomas Schuster
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Abstract
A semiconductor structure having a plurality of gate stacks on a semiconductor substrate provided with a gate dielectric. The gate stacks have a lower first layer made of polysilicon, an overlying second layer made of a metal silicide, and an upper third layer made of an insulating material, and a sidewall oxide on the sidewalls of the first and second layers. The sidewall oxide is thinned or removed on one of the sidewalls, and the gate stacks have sidewall spacers made of the insulating material.
Claims4
A semiconductor structure comprising a plurality of gate stacks on a semiconductor substrate provided with a gate dielectric, the gate stacks having a lower first layer made of polysilicon, an overlying second layer made of a metal silicide, in particular a tungsten silicide, and an upper third layer made of an insulating material, and having a sidewall oxide on the sidewalls of the first and second layers, the sidewall oxide being thinned on one of those sidewalls and the sidewall oxide being intact on at least one other of those sidewalls, and the gate stacks having sidewall spacers made of said insulating material.
Dependencies are inferred from the claim text.