CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
AssigneeAir Products and Chemicals, Inc.
InventorsTimothy Frederick Compton, Junaid Ahmed Siddiqui, Ajoy Zutshi
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Abstract
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
Claims23
A method of step 2 copper chemical-mechanical planarization, said method comprising the steps of:
- A) placing a substrate comprising copper, at least one dielectric material and at least one barrier material in contact with a polishing pad;
- B) delivering a step 2 chemical-mechanical planarization composition comprising
- a) a boron surface-modified abrasive;
- b) a nitro-substituted sulfonic acid compound;
- c) an oxidizing agent;
- and
- d) water;
- C) polishing the substrate with the step 2 copper chemical-mechanical planarization composition.
A method of step 2 copper chemical-mechanical planarization, said method comprising the steps of:
- A) placing a substrate comprising copper, at least one dielectric material and at least one barrier material in contact with a polishing pad;
- B) delivering a step 2 chemical-mechanical planarization composition comprising
- a) a boron surface-modified abrasive present at a weight percent level in the composition ranging from about 0.5 weight % to about 5 weight %;
- b) a nitro-substituted sulfonic acid compound present at a weight percent level in the composition ranging from about 0.5 weight % to about 6 weight %;
- c) a per-compound oxidizing agent present at a level ranging from 0.5 weight % to 6 weight % of the total weight of the composition;
- and
- d) water;
- C) polishing the substrate with the step 2 copper chemical-mechanical planarization composition.
Dependencies are inferred from the claim text.