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US 7,678,700 B2Granted
Silicon carbide polishing method utilizing water-soluble oxidizers
AssigneeCabot Microelectronics Corporation
InventorsMukesh Desai, Kevin Moeggenborg, Phillip Carter
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Abstract
The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
Claims23
A method of chemically-mechanically polishing a substrate, which method comprises:
- (i) contacting a substrate comprising at least one layer of single crystal silicon carbide with a chemical-mechanical polishing composition comprising:
- (a) a liquid carrier, wherein the liquid carrier with any components dissolved or suspended therein has a pH of about 5 or less,
- (b) an abrasive suspended in the liquid carrier, wherein the abrasive consists of substantially spherical precipitated or condensation-polymerized silica particles having an average particle size of about 40 nm to about 130 nm, and
- (c) an oxidizing agent selected from the group consisting of oxone, ammonium cerium nitrate, periodates, iodates, persulfates, and mixtures thereof,
- (ii) moving the polishing composition relative to the substrate, and
- (iii) abrading at least a portion of the silicon carbide of the substrate to polish the substrate.
3 more elements
Dependencies are inferred from the claim text.