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US 7,678,677 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorJeong Yel Jang
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes: forming a device isolation layer in a semiconductor substrate; forming a gate insulating layer and a gate electrode on the semiconductor substrate; depositing a triple layer over the resulting structure, the triple layer including a bottom oxide layer, a nitride oxide layer and a top oxide layer; and etching the triple layer to form spacers.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a device isolation layer in a semiconductor substrate;
- forming a gate insulating layer and a gate electrode on the semiconductor substrate;
- depositing a triple layer over the resulting structure, the triple layer including a bottom oxide layer, a nitride layer, and a top oxide layer;
- and
- etching the top oxide layer and nitride layer of the triple layer by a first etching process having an etch selectivity of 3:1 or lower, and subsequently removing a remaining portion of the nitride layer by a second process having an etch selectivity of at least 10:1, thereby exposing the bottom oxide layer remaining on the device isolation layer, to form spacers.
2 more elements
A semiconductor substrate, comprising:
- a semiconductor substrate;
- a device isolation layer in a trench in the substrate, the device isolation layer comprising an oxide layer that fills the trench;
- a gate insulating layer on the semiconductor substrate;
- a gate electrode on the gate insulating layer;
- and
- a spacer on a side of the gate electrode and a side of the gate insulating layer, the spacer including a triple layer having a bottom oxide layer on the device isolation layer and at least a top surface and sidewalls of the gate electrode and, a nitride layer, and a top oxide layer;
- and
- a bulk dielectric layer directly on an exposed surface of the bottom oxide layer.
5 more elements
Dependencies are inferred from the claim text.