Strengthening of a structure by infiltration
AssigneeInternational Business Machines Corporation
InventorsElbert Huang, William F. Landers, Michael Lane, Eric G. Liniger, Xiao H. Liu, David L. Questad, Thomas M. Shaw
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Abstract
The present invention provides a method of strengthening a structure, to heal the imperfection of the structure, to reinforce the structure, and thus strengthening the dielectric without compromising the desirable low dielectric constant of the structure. The inventive method includes the steps of providing a semiconductor structure having at least one interconnect structure; dicing the interconnect structure; applying at least one infiltrant into the interconnect structure; and infiltrating the infiltrant to infiltrate into the interconnect structure.
Claims20
A method of strengthening a structure, which comprises:
- providing a structure having at least one interconnect structure located therein;
- dicing said structure including the at least one interconnect structure;
- applying at least one infiltrant to at least one exposed sidewall edge of said at least one interconnect structure, said at least one infiltrant does not extend onto an upper or lower surface of the at least one interconnect structure;
- and
- infiltrating said at least one infiltrant into said at least one interconnect structure.
A method of strengthening a structure, which comprises:
- providing a structure having at least one interconnect structure located therein;
- dicing said structure including at least one interconnect structure completely;
- forming a plurality of chips;
- applying at least one infiltrant to at least one exposed sidewall edge of said plurality of chips, said at least one infiltrant does not extend onto an upper or lower surface of the plurality of chips;
- and
- infiltrating said at least one infiltrant into said plurality of chips.
Dependencies are inferred from the claim text.