TEG removing method in manufacturing method for semiconductor chips
AssigneePanasonic Corporation
InventorsKiyoshi Arita, Akira Nakagawa
Life of this patent
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Abstract
A semiconductor chip manufacturing process includes sticking a protective sheet onto a first surface of a semiconductor wafer so that the sheet comes in contact with the TEG, placing a mask on a second surface that is a surface opposite from the first surface, performing plasma etching on the second surface to remove portions corresponding to dividing regions and separate device-formation-regions into individual semiconductor chips, and removing the TEG in a state where it remains unremoved in the dividing regions and stuck to the protective sheet together with the protective sheet by peeling off the protective sheet.
Claims9
A manufacturing method for semiconductor chips comprising:
- sticking a protective sheet onto a first surface of a semiconductor wafer, the first surface having semiconductor devices placed in a plurality of device-formation-regions defined by dividing regions and a test element group (TEG) placed in the dividing regions and formed on the first surface, so that the sheet is brought in contact with the TEG;
- placing a mask on a second surface of the semiconductor wafer, the second surface being located opposite the first surface of the wafer so as to define the dividing regions;
- performing plasma etching on the second surface of the wafer after the protective sheet is stuck to the first surface and the mask is placed on the second surface, thereby removing portions corresponding to the dividing regions and then dividing the device-formation-regions into individual semiconductor chips, each individual semiconductor chip including an individualized semiconductor device;
- and
- removing a remaining portion of the TEG, which remains in the dividing regions and is stuck to the protective sheet, together with the protective sheet by peeling off the protective sheet from the semiconductor chips divided by the plasma etching, thereby manufacturing the individualized semiconductor chips.
A manufacturing method for semiconductor chips comprising:
- sticking a protective sheet onto a first surface of a semiconductor wafer, the first surface having semiconductor devices placed in a plurality of device-formation-regions defined by dividing regions and a test element group (TEG) placed in the dividing region and formed on the first surface, so that the sheet is brought in contact with the TEG;
- forming groove-portions, along the dividing regions, in portions corresponding to the dividing regions on a second surface located opposite from the first surface of the wafer so that the groove-portions have depths shallower than a thickness dimension of the wafer;
- performing plasma etching on the second surface of the semiconductor wafer on which the groove-portions are formed, thereby removing bottom portions of the groove-portions and then dividing the device-formation-regions into individual semiconductor chips, each individual semiconductor chip including an individualized semiconductor device;
- and
- removing a remaining portion of the TEG, which remains in the dividing regions and is stuck to the protective sheet, together with the protective sheet by peeling off the protective sheet from the semiconductor chips divided by the plasma etching, thereby manufacturing the individualized semiconductor chips.
Dependencies are inferred from the claim text.