Loading patent…
AssigneeNational Semiconductor Corporation
InventorsTodd Patrick Thibeault, Steven J. Adler, Scott David Ruby
Estimating the term…
A system and method are disclosed for manufacturing an emitter structure in a complementary bipolar complementary metal oxide semiconductor (CBiCMOS) transistor manufacturing process. A protective layer is formed over an emitter layer in a transistor structure and lateral portions of the protective layer and the emitter layer are etched to form an emitter structure. An oxide layer is then deposited over the transistor structure and an etchback process is performed to remove portions of the oxide layer from the top of the protective layer. A source/drain implant process is then performed to implant an extrinsic base region of the transistor. The protective layer protects the emitter structure from the implant process. Then the protective layer is removed from the emitter structure.
A method of manufacturing in a transistor integrated circuit, said method comprising the steps of:
A method for eliminating at least one mask step in a complementary bipolar complementary metal oxide semiconductor transistor manufacturing process, said method comprising the steps of:
The method as claimed in clam 14 wherein said silicon nitride layer is approximately one thousand Angstroms in thickness.
A method of manufacturing a transistor in a complementary bipolar complementary metal oxide semiconductor transistor manufacturing process, said method comprising the steps of:
Dependencies are inferred from the claim text.