Method and system for forming a thin film device
AssigneeHewlett-Packard Development Company, L.P.
InventorsCraig M. Perlov, Ping Mei
Life of this patent
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Abstract
A method of forming a thin film device on a flexible substrate is disclosed. The method includes depositing an imprintable material over the flexible substrate. The imprintable are stamped material forming a three-dimensional pattern in the imprintable material. A sacrificial layer is formed over the three-dimensional pattern. A conductive layer is deposited over the sacrificial layer. The sacrificial layer is removed, leaving portions of the conductive layer as defined by the three-dimensional pattern.
Claims19
A method of forming a thin film device on a substrate, comprising:
- depositing an imprintable material over the substrate;
- stamping the imprintable material forming a three-dimensional pattern in the imprintable material;
- forming a distinct sacrificial layer over the three-dimensional pattern;
- depositing a conductive layer over the distinct sacrificial layer;
- removing the distinct sacrificial layer, leaving portions of the conductive layer as defined by the three-dimensional pattern;
- depositing a gate layer over the substrate;
- depositing a gate dielectric over the gate layer;
- and
- depositing a channel material over the gate dielectric.
A system for fabricating a transparent thin film transistor over a flexible substrate comprising:
- means for depositing an imprintable material over the flexible substrate;
- means for stamping the imprintable material forming a three-dimensional pattern in the imprintable material;
- means for forming a distinct sacrificial layer over the three-dimensional pattern;
- and
- means for depositing a conductive layer over the distinct sacrificial layer;
- and means for dissolving effectively all of the distinct sacrificial layer, leaving portions of the conductive layer as defined by the three-dimensional pattern;
- means for depositing a gate layer over the substrate;
- means for depositing a gate dielectric over the gate layer;
- and
- means for depositing a channel material over the gate dielectric.
A method of forming a thin film device on a substrate, comprising:
- depositing an imprintable material over the substrate;
- stamping the imprintable material forming a three-dimensional pattern in the imprintable material;
- forming a distinct sacrificial layer over the three-dimensional pattern;
- depositing a etch-resistant conductive layer over the distinct sacrificial layer;
- removing effectively all of the distinct sacrificial layer, leaving portions of the etch-resistant conductive layer as thin film device conductors as defined by the three-dimensional pattern;
- depositing a gate layer over the substrate;
- depositing a gate dielectric over the gate layer;
- and
- depositing a channel material over the gate dielectric.
A method of forming a thin film device on a substrate, comprising:
- depositing at least one thin film device layer upon the substrate;
- depositing an imprintable material over the at least one thin film device layer
- stamping the imprintable material forming a three-dimensional patterin in the imprintable material;
- forming a distinct sacrificial layer over the three-dimensional pattern, the distinct sacrificial layer a separate structure form the at least one thin film device layer;
- depositing a conductive layer over the distinct sacrificial layer;
- and
- removing effectively all of the distinct sacrificial layer, leaving portions of the conductive layer as defined by the three-dimensional pattern;
- depositing a gate layer over the substrate;
- depositing a gate dielectric over the gate layer;
- and
- depositing a channel material over the gate dielectric.
Dependencies are inferred from the claim text.