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US 7,678,605 B2Granted
Method for chemical mechanical planarization of chalcogenide materials
AssigneeDuPont Air Products NanoMaterials LLC
InventorsJames Allen Schlueter, Bentley J. Palmer
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Abstract
A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.
Claims18
A method for chemical mechanical planarization of a surface having at least one feature thereon comprising a chalcogenide material, said method comprising the steps of:
- A) placing a substrate having the surface having the at least one feature thereon comprising a chalcogenide material in contact with a polishing pad;
- B) delivering a polishing composition comprising:
- a) an abrasive;
- and
- b) an oxidizing agent;
- and
- C) polishing the substrate with the polishing composition;
- wherein the oxidizing agent has an oxidation potential that exceeds the oxidation potential of each of the constituents in the chalcogenide material by at least 10 millivolts.
5 more elements
Dependencies are inferred from the claim text.