Method for fabricating semiconductor device with recess gate
AssigneeHynix Semiconductor Inc.
InventorsJung-Seock Lee, Ky-Hyun Han
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming a mask pattern over a substrate; etching a certain portion of the substrate using the mask pattern as an etch mask to form a first recess having sidewalls; forming a polymer-based layer over the sidewalls of the first recess and a top surface of the mask pattern; etching the substrate beneath the first recess using the mask pattern and the polymer-based layer as an etch mask to form a second recess wider and more rounded than the first recess, the second recess and the first recess constituting a bulb-shaped recess; and forming a gate pattern over the bulb-shaped recess.
Claims15
A method for fabricating a semiconductor device, comprising:
- forming a mask pattern over a substrate;
- etching a certain portion of the substrate using the mask pattern as an etch mask to form a first recess having sidewalls;
- forming a polymer-based layer over the sidewalls of the first recess and a top surface of the mask pattern, wherein the polymer-based layer is formed at the same time when the substrate is etched to form the first recess;
- etching the substrate beneath the first recess using the mask pattern and the polymer-based layer as an etch mask to form a second recess wider and more rounded than the first recess, the second recess and the first recess constituting a bulb-shaped recess;
- rounding top corners of the bulb-shaped recess;
- and
- forming a gate pattern over the bulb-shaped recess.
Dependencies are inferred from the claim text.