Mask for exposure and method of manufacturing the same
AssigneeFujitsu Microelectronics Limited
InventorsNaoyuki Ishiwata, Koji Hosono
Life of this patent
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AssigneeFujitsu Microelectronics Limited
InventorsNaoyuki Ishiwata, Koji Hosono
Estimating the term…
There is provided a method of manufacturing a mask for exposure, which is capable of measuring the phase difference between a shifter portion and a non-shifter portion with good accuracy. A mask for exposure having: two first light-shielding device patterns, which are formed on a quartz substrate (transparent substrate) in a device region at a first gap and extend over a first concave portion; a second device light-shielding pattern at a second gap from the first device light-shielding pattern; two first light-shielding monitor patterns, which are formed on the quartz substrate in a monitor region at a third gap wider than the first gap and extend over a second concave portion; and second light-shielding monitor pattern, which has a fourth gap wider than the second gap from the first light-shielding monitor pattern, in which the size of the first light-shielding monitor pattern is equal to or less than the size of the first light-shielding device pattern.
A mask for exposure, comprising:
A mask for exposure, comprising:
A method of manufacturing a mask for exposure, comprising:
A method of manufacturing a mask for exposure, comprising:
Dependencies are inferred from the claim text.