Method of depositing germanium films
AssigneeSanDisk 3D LLC
InventorScott Brad Herner
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Abstract
A chemical vapor deposition method provides a smooth continuous germanium film layer, which is deposited on a metallic substrate at a sufficiently lower temperature to provide a germanium device suitable for use with temperature sensitive materials such as aluminum and copper. Another chemical vapor deposition method provides a smooth continuous silicon germanium film layer, which is deposited on a silicon dioxide substrate at a sufficiently low temperature to provide a germanium device suitable for use with temperature sensitive materials such as aluminum, copper and chalcogenides memory materials.
Claims29
A chemical vapor deposition process, comprising:
- using a first precursor gas at a temperature between about 320° C. and about 380° C. to deposit a self-limited silicon film layer on a metallic substrate;
- and
- using a second precursor gas at a temperature between about 320° C. and about 380° C. to deposit a germanium film layer on said self-limited silicon film layer.
A chemical vapor deposition process, comprising:
- using a precursor gas at a temperature of about 320° C. to deposit an amorphous germanium film layer on a metallic substrate.
A chemical vapor deposition process, comprising:
- using a first precursor gas at a temperature of between about 320° C. and about 380° C. to deposit a silicon film layer on a metallic substrate;
- and
- using a second precursor gas at a temperature of between about 320° C. and about 380° C. to deposit a germanium film layer on said silicon film layer.
A chemical vapor deposition process, comprising:
- using a first precursor gas at a temperature of between about 320° C. and about 380° C. to deposit a silicon seed film layer on a substrate;
- and
- using a second precursor gas at a temperature of between about 320° C. and about 380° C. to deposit a germanium film layer on said silicon seed film layer;
- wherein the substrate comprises a metallic substrate, a silicon dioxide substrate, or a silicon nitride substrate.
Dependencies are inferred from the claim text.