Substrate cleaning method

A method for removing a film from a wafer in a substrate processing system, the method comprising the steps of:

• a) exposing the wafer in a process chamber of the substrate processing system to a first processing liquid, wherein the wafer is rotated at a first speed and the first processing liquid is discharged from the process chamber to a first processing liquid circulation system;
• b) discontinuing the exposing of the wafer to the first processing liquid and rotating the wafer at a second speed greater than the first speed while changing the process chamber discharge from the first processing liquid circulation system to a processing liquid drain;
• c) exposing the wafer to a second processing liquid and discharging the second processing liquid from the process chamber to processing liquid drain;
• d) changing the process chamber discharge from the processing liquid drain to the first processing liquid circulation system;
• and
• e) exposing the wafer to the first processing liquid and discharging the first processing liquid from the process chamber to the first processing liquid circulation system,
• wherein fragments of the film on the wafer are removed at least when the wafer is rotating at the second speed.

A method for removing a film from a wafer in a substrate processing system, the method comprising the steps of:

• a) exposing the wafer in a process chamber of the substrate processing system to a first processing liquid, wherein the wafer is rotated at a first speed and the first processing liquid is discharged from the process chamber to a first processing liquid circulation system;
• b) discontinuing the exposing of the wafer to the first processing liquid and rotating the wafer at a second speed greater than the first speed while changing the process chamber discharge from the first process liquid circulation system to a processing liquid drain;
• c) exposing the wafer to a second processing liquid and discharging the second processing liquid from the process chamber to the processing liquid drain;
• d) changing the process chamber discharge from the processing liquid drain to a second processing liquid circulation system;
• and
• e) exposing the wafer to the second processing liquid and discharging the second processing liquid from the process chamber to the second processing liquid circulation system, wherein fragments of the film on the wafer are removed at least when the wafer is rotating at the second speed.