US 7,633,095 B1Granted

Integration of high-voltage devices and other devices

AssigneeRF Micro Devices, Inc.

InventorsDaniel Charles Kerr, David C. Dening, Julio Costa

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Abstract

Integrating high-voltage devices with other circuitry, which may be fabricated on a semiconductor wafer using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The high-voltage devices may be used to create useful high-voltage circuits, such as level-shifting circuits, input protection circuits, charge pump circuits, switching circuits, latch circuits, latching switch circuits, interface circuits, any combination thereof, or the like. The high-voltage circuits may be controlled by the other circuitry.

Claims20

Dependent claims

A semiconductor wafer comprising:

a first insulator layer;
and
at least one semiconductor device layer formed over the first insulator layer and comprising;
a source;
a drain;
first intrinsic material between the source and the drain, such that the first intrinsic material has a resistivity greater than about one ohm·centimeter and the source, the drain, and the first intrinsic material form a first lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET);
a first section, which provides a combined PNP base-NPN collector;
a second section, which provides a combined NPN base-PNP collector;
and
second intrinsic material between the first section and the second section, such that the second intrinsic material has a resistivity greater than about one ohm·centimeter and the first section, the second section, and the second intrinsic material form a first lateral high-voltage thyristor (LHVT).

7 more elements

Dependencies are inferred from the claim text.