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US 7,626,682 B2Granted
Reticle stages for lithography systems and lithography methods
AssigneeInfineon Technologies AG
InventorsStefan Wurm, Siegfried Schwarzl
Life of this patent
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Abstract
Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle.
Claims12
A lithography system, comprising:
- a base structure;
- a reticle stage supported by said base structure such that said reticle stage can move in a first direction;
- a slide member movable in a second direction orthogonal to said first direction;
- a first region of said slide member adapted to support a first reticle;
- and
- at least one second region of said slide member adapted to support a second reticle.
3 more elements
A method of patterning a material layer of a semiconductor device, comprising:
- providing a workpiece, the workpiece comprising a material layer to be patterned and a layer of photosensitive material disposed over the material layer;
- providing a base support;
- providing a lithography system comprising a reticle stage supported by said base support, such that said reticle stage can move in a first direction, said reticle stage adapted to support a slide member for moving in a second direction orthogonal to said first direction and said slide member supporting at least a first lithography mask and at least one second lithography mask;
- patterning the first region of the layer of photosensitive material with the first lithography mask;
- patterning the at least one second region of the layer of photosensitive material with the at least one second lithography mask;
- developing the layer of photosensitive material;
- and
- using the layer of photosensitive material to pattern the material layer of the workpiece.
5 more elements
Dependencies are inferred from the claim text.