Semiconductor device and method of manufacturing the same
AssigneePanasonic Corporation
InventorsKazumi Watase, Tsuyoshi Hamatani
Life of this patent
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Abstract
A conductive region electrically connected to a buffer coat film is formed on at least one corner of a semiconductor substrate, so that electricity charged on a package seal resin or a surface of the buffer coat film is allowed to flow toward the conductive region through a conductive path. Thus, density of the electricity charged on the package seal resin or the surface of the buffer coat film is lowered, and electric discharge can be suppressed. Since the electric discharge is suppressed, no high voltage is applied to an external input/output terminal. As a result, it is possible to prevent a circuit metal wire connected to an integrated circuit from being fused and an interlayer insulating film from being damaged.
Claims11
A semiconductor device comprising:
- a semiconductor substrate having a semiconductor integrated circuit formed therein and element electrodes formed thereon;
- a protection insulating film formed on the semiconductor substrate having openings to expose a conductive region and the element electrodes;.
- a buffer coat film formed on the protection insulating film on a semiconductor integrated circuit formation region;
- the
- conductive region electrically connected to the buffer coat film and wherein the conductive region is in a ring shape at a periphery of the semiconductor substrate.
A semiconductor device comprising:
- a semiconductor substrate having a semiconductor integrated circuit formed therein and element electrodes formed thereon;
- a protection insulating film formed on the semiconductor substrate having openings to expose a conductive region and the element electrodes.
- a buffer coat film formed on the protection insulating film on a semiconductor integrated circuit formation region, and connected to at least one ground electrode of the element electrodes and wherein the conductive region is in a ring shape at a periphery of the semiconductor substrate.
Dependencies are inferred from the claim text.