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US 7,622,752 B2Granted
Schottky diode with a vertical barrier
AssigneesSTMicroelectronics S.r.l., STMicroelectronics Maroc
InventorsFrédéric Lanois, Sylvain Nizou
Life of this patent
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Abstract
A Schottky diode with a vertical barrier extending perpendicularly to the surface of a semiconductor chip having a vertical central metal conductor in contact on the one hand with the substrate of the semiconductor chip with an interposed interface forming a Schottky barrier, and on the other hand with radially-extending conductive fingers.
Claims7
A Schottky diode with a vertical barrier extending perpendicularly to the surface of a semiconductor chip comprising:
- a substrate body material extending through an entire thickness of the semiconductor chip;
- and
- a vertical central metal conductor extending through an entire thickness of the semiconductor chip, the vertical central metal conductor being in contact, substantially along its entire length, on the one hand with the substrate body material of the semiconductor chip with an interposed interface forming a Schottky barrier, and on the other hand with radially-extending conductive fingers.
Dependencies are inferred from the claim text.