Method of producing a semiconductor device
AssigneeHitachi Kokusai Electric Inc.
InventorsKazuyuki Okuda, Yasushi Yagi, Toru Kagaya, Masanori Sakai
Life of this patent
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Abstract
A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.
Claims20
A method of producing a semiconductor device, comprising:
- providing a reaction chamber with a substrate;
- and
- sequentially repeating a substrate processing cycle to process the substrate disposed in the reaction chamber, the cycle comprising:
- supplying a first kind of gas, into the reaction chamber;
- exhausting the first kind of gas from the reaction chamber;
- supplying a second kind of gas into the reaction chamber;
- and
- exhausting the second kind of gas from the reaction chamber,
- wherein the first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and the first kind of gas reserved in the intermediate portion of the supply path is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.
A method of producing a semiconductor device, comprising:
- providing a reaction chamber with a substrate;
- and
- sequentially repeating a substrate processing cycle to process the substrate disposed in the reaction chamber, the cycle comprising:
- supplying a first kind of gas into the reaction chamber;
- exhausting the first kind of gas from the reaction chamber;
- supplying a second kind of gas into the reaction chamber;
- and
- exhausting the second kind of gas from the reaction chamber,
- wherein the first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and the first kind of gas reserved in the intermediate portion of the supply path is supplied into the reaction chamber, without being activated by plasma excitation, while exhaust of the reaction chamber is substantially stopped, and
- the second kind of gas is supplied into the reaction chamber, with the second kind of gas being activated by plasma-excitation, while the reaction chamber is exhausted.
A method of producing a semiconductor device, comprising:
- providing a reaction chamber with a substrate;
- and
- sequentially repeating a substrate processing cycle to process the substrate disposed in the reaction chamber, the cycle comprising:
- supplying a first kind of gas into the reaction chamber;
- exhausting the first kind of gas from the reaction chamber;
- supplying a second kind of gas into the reaction chamber;
- and
- exhausting the second kind of gas from the reaction chamber,
- wherein the first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first gas flows, and the first gas reserved in the intermediate portion of the supply path is supplied into the reaction chamber while exhaust of the reaction chamber is substantially stopped to raise a pressure of the reaction chamber to 166 Pa or more.
Dependencies are inferred from the claim text.