Method and apparatus for manufacturing a semiconductor device, control program thereof and computer-readable storage medium storing the control program
AssigneeTokyo Electron Limited
InventorKazuki Narishige
Life of this patent
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Abstract
A semiconductor device manufacturing method includes a plasma etching process for selectively plasma etching a silicon nitride film against a silicon oxide film formed under the silicon nitride film in a substrate to be processed. The plasma etching process uses an etching gas including a CmFn gas (m, n represent integers of 1 or greater) added to a gaseous mixture of a CHxFy gas (x, y represent integers of 1 or greater) and O2 gas, wherein the flow rate of the CmFn gas is not greater than 10% of that of the O2 gas. The etching gas may further include a rare gas.
Claims13
A method for manufacturing a semiconductor device, comprising:
- forming a layer of silicon oxide on a substrate;
- forming a layer of silicon nitride over the layer of silicon oxide;
- and
- subjecting the layer of silicon nitride to a plasma etching gas including CmFn gas, CHxFy gas and O2 gas for selectively removing the layer of silicon nitride from the layer of the silicon oxide to expose the layer of the silicon oxide,
- wherein m, n, x and y are integers of 1 or greater, respectively, and a flow rate of the CmFn gas is not greater than 10% of that of the O2 gas.
A method for manufacturing a semiconductor device, comprising:
- forming a gate on a substrate;
- forming a silicon oxide film on the gate;
- forming a silicon nitride film on the silicon oxide film;
- and
- subjecting the silicon nitride film to a plasma etching gas including CmFn gas, CHxFy gas and O2 gas for selectively removing the silicon nitride film from the silicon oxide film to form spacers on sidewalls of the gate;
- wherein m, n, x and y are integers of 1 or greater, respectively, and a flow rate of the CmFn gas is not greater than 10% of that of the O2 gas.
A method for manufacturing a semiconductor device, comprising:
- forming a gate on a substrate;
- forming a silicon oxide film on the gate;
- forming a silicon nitride film on the silicon oxide film;
- and
- subjecting the silicon nitride film to a plasma etching gas including CmFn gas, CHxFy gas and O2 gas for selectively removing the silicon nitride film from the silicon oxide to form spacers on sidewalls of the gate;
- wherein m, n, x and y are integers of 1 or greater respectively, and a flow rate of the CmFn gas is not greater than 10% of that of the O2 gas,
- the plasma etching gas further includes a rare gas;
- the CHxFy gas is CH3F gas or CH2F2 gas;
- and the CmFn gas is C2F6 gas, C3F8 gas, C4F6 gas, C4F8 gas or C5F8 gas.
Dependencies are inferred from the claim text.