Methods of forming titanium-containing materials
AssigneeMicron Technolyg, Inc.
InventorsJaydeb Goswami, Joel A. Drewes
Life of this patent
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Abstract
The invention includes methods of forming titanium-containing materials, such as, for example, titanium silicide. The invention can use alternating cycles of titanium halide precursor and one or more reductants to form the titanium-containing material. For instance, the invention can utilize alternating cycles of titanium tetrachloride and activated hydrogen to form titanium silicide on a surface of a silicon-containing substrate.
Claims15
A method of forming titanium silicide, comprising at least two iterations of the following sequence in the following order:
- exposing a substrate to at least one titanium-containing precursor in the absence of hydrogen-containing fluid to form a titanium-containing layer on the substrate, the substrate comprising silicon;
- and
- forming titanium silicide from titanium of the titanium-containing layer, wherein the formation of the titanium silicide comprises exposure of the titanium-containing layer to hydrogen-containing fluid, and migration of silicon from the substrate to interact with titanium of the titanium-containing layer;
- and
- wherein an earlier of the at least two iterations has a shorter exposure of the substrate to the at least one titanium-containing precursor and longer exposure of the substrate to the hydrogen-containing fluid than a later of the at least two iterations;
- the earlier of the at least two iterations forming a first portion of the titanium silicide, said first portion being substantially entirely in the C-54 phase and thus being a C-54 phase template;
- the later of the at least two iterations forming a second portion of the titanium silicide, and comprising conditions less conducive to forming the C-54 phase than the earlier of the at least two iterations;
- the second portion being substantially entirely in the C-54 phase due, at least in part, to the C-54 phase being induced from the C-54 phase template.
A method of forming titanium silicide, comprising at least two iterations of the following sequence in the following order:
- exposing a substrate to one or more titanium halides in the absence of one or more reductants to form a titanium-containing layer on the substrate, the substrate comprising silicon;
- and
- forming titanium silicide from titanium of the titanium-containing layer, wherein the formation of the titanium silicide comprises exposure of the titanium-containing layer to the one or more reductants, and migration of silicon from the substrate to interact with titanium of the titanium-containing layer;
- and
- wherein an earlier of the at least two iterations has a shorter exposure of the substrate to the one or more titanium halides and longer exposure of the substrate to the one or more reductants than a later of the at least two iterations;
- the earlier of the at least two iterations forming a first portion of the titanium silicide, said first portion being substantially entirely in the C-54 phase and thus being a C-54 phase template;
- the later of the at least two iterations forming a second portion of the titanium silicide, and comprising conditions less conducive to forming the C-54 phase than the earlier of the at least two iterations;
- the second portion being substantially entirely in the C-54 phase due, at least in part, to the C-54 phase being induced from the C-54 phase template.
Dependencies are inferred from the claim text.