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US 7,622,359 B2Granted
Method for manufacturing semiconductor device
AssigneeSeiko Epson Corporation
InventorsJuri Kato, Kei Kanemoto
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device, includes: (a) forming a SiGe layer on a Si substrate; (b) forming a Si layer on the SiGe layer; (c) forming a dummy pattern made of SiGe in a dummy region of the Si substrate; and (d) wet-etching and removing the SiGe layer formed under the Si layer. In the step (d), an etchant is kept to contact the dummy pattern from before a complete remove of the SiGe layer to an end of the etching.
Claims8
A method for manufacturing a semiconductor device, including:
- (a) forming a SiGe layer on a Si substrate;
- (b) forming a Si layer on the SiGe layer;
- (c) forming a dummy pattern made of SiGe in a dummy region of the Si substrate;
- and
- (d) wet-etching and removing the SiGe layer formed under the Si layer, wherein
- in the step (d), an etchant is kept to contact the dummy pattern from before a complete remove of the SiGe layer to an end of the etching.
3 more elements
A method for manufacturing a semiconductor device, including:
- (e) forming a SiGe layer on a Si substrate;
- (f) forming a Si layer on the SiGe layer;
- (g) etching the Si layer and the SiGe layer partially so as to form a dummy pattern made of the SiGe layer in a dummy region of the Si substrate and form a groove exposing a lateral surface of the dummy pattern and a lateral surface of the SiGe layer in an element region;
- and
- (h) wet-etching the SiGe layer through the groove so as to form a cavity between the Si substrate and the Si layer in the element region, wherein
- in the step (h), an etchant is kept to contact the dummy pattern through the groove from a beginning of the etching to an end of the etching.
3 more elements
Dependencies are inferred from the claim text.