Methods for critical dimension control during plasma etching
AssigneeLam Research Corporation
InventorsDavid M. Schaefer, Gowri P. Kota
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Abstract
A method of etching a substrate in a plasma processing chamber is disclosed. The method includes introducing the substrate having thereon an underlying layer, an anti-reflective layer above the underlying layer, and a photo-resist layer above the anti-reflective layer into the chamber. The method also includes flowing a gas mixture into the chamber, the gas mixture includes a flow of a hydrofluorocarbon gas, a flow of fluorocarbon gas, a flow of a halogen-containing gas other than the hydrofluorocarbon gas, and a flow of oxygen gas. The method further includes striking a plasma from the gas mixture. The method additionally includes etching at least through the anti-reflective layer with the plasma.
Claims20
In a plasma processing chamber, a method of etching an anti-reflective layer on a substrate, comprising:
- introducing said substrate having thereon an underlying layer, said anti-reflective layer above said underlying layer, and a photo-resist layer above said anti-reflective layer into said chamber;
- flowing a gas mixture into said chamber, said gas mixture consisting of a flow of CH2F2 gas, a flow of at least one of CF4, C2F6, and C4F8 gas, a flow of Cl2 gas, and a flow of oxygen gas;
- striking a plasma from said gas mixture;
- and
- etching said anti-reflective layer with said plasma.
In a plasma processing chamber, a method of etching an anti-reflective layer on a substrate, comprising:
- introducing said substrate having thereon an underlying layer, said anti-reflective layer above said underlying layer, and a photo-resist layer above said anti-reflective layer into said chamber;
- flowing a gas mixture into said chamber, said gas mixture consisting of a flow of CH2F2 gas, a flow of at least one of CF4, C2F6, and C4F8 gas, a flow of Cl2 gas, and a flow of oxygen gas;
- striking a plasma from said gas mixture;
- and
- etching at least through said anti-reflective layer with said plasma.
Dependencies are inferred from the claim text.