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US 7,621,996 B2Granted
Silicon wafer and method for producing same
AssigneeSumco Corporation
InventorKazunari Kurita
Life of this patent
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Abstract
A method for producing a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more.
Claims4
A method for producing a silicon wafer having a carbon concentration of 5×1015 to 5×1017 atoms/cm3, an interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more, comprising:
- performing the crystal growth of a silicon single crystal by the CZ method such that the silicon single crystal has a resistivity of 100 Ωcm or more, a primary interstitial oxygen concentration of 8.0×1017 to 16.0×1017 atoms/cm3, and a carbon concentration of 5×1015 to 5×1017 atoms/cm3;
- and
- performing a first heat treatment where a silicon wafer sliced from the silicon single crystal is heated in an atmosphere composed of argon, nitrogen, or a mixed gas of argon and nitrogen, and the heating temperature of the wafer is increased from 700° C. to 1000° C. with a heating rate of 1 to 2° C./min.
Dependencies are inferred from the claim text.