Methods for forming a MRAM with non-orthogonal wiring

A method for forming a magnetic random access memory (MRAM) array, comprising:

• forming a first wiring layer of approximately parallel word conductors on a wafer using a first data set when a work piece is at a first rotational position θ1;
• forming a second wiring layer of approximately parallel bit conductors on the wafer using a second data set when the work piece is at a second rotational position θ2 such that the bit conductors of the second wiring layer cross with the word conductors of the first wiring layer at a number of intersections, wherein the second wiring layer is non-orthogonal to the first wiring layer;
• forming a third wiring layer of approximately parallel select conductors such that the select conductors of the third wiring layer cross the word conductors of the first wiring layer and the bit conductors of the second wiring layer at the number of intersections;
• and
• forming a layer of magnetic storage elements, wherein the magnetic storage elements are proximately located to the intersections and are magnetically coupled to magnetic fields generated when current flows in word lines, when current flows in bit lines, and when current flows in select lines, wherein a desired magnetic storage element is written using three magnetic fields, wherein the three magnetic fields used to write the desired magnetic storage element include a first magnetic field produced by an energized word conductor in the first wiring layer, a second magnetic field produced by an energized bit conductor in the second wiring layer, and a third magnetic field produced by an energized select conductor in the third wiring layer.

A method for forming a magnetic random access memory (MRAM) array, comprising:

• forming a first wiring layer of approximately parallel word conductors using a first reticle;
• forming a second wiring layer of approximately parallel bit conductors using a second reticle such that the bit conductors of the second wiring layer cross with the word conductors of the first wiring layer at a number of intersections;
• forming a third wiring layer of approximately parallel select conductors using a third reticle such that the select conductors of the third wiring layer cross the word conductors of the first wiring layer and the bit conductors of the second wiring layer at the number of intersections;
• and
• forming a layer of magnetic storage elements, wherein the magnetic storage elements are proximately located to the intersections and are magnetically coupled to magnetic fields generated when current flows in word lines, when current flows in bit lines, and when current flows in select lines,
• wherein at least one of the first wiring layer, the second wiring layer and the third wiring layer is formed so as to be non-orthogonal with respect to a remaining at least one of the first wiring layer, the second wiring layer and the third wiring layer, and
• wherein a desired magnetic storage element is written using three magnetic fields, wherein the three magnetic fields used to write the desired magnetic storage element include a first magnetic field produced by an energized word conductor in the first wiring layer, a second magnetic field produced by an energized bit conductor in the second wiring layer, and a third magnetic field produced by an energized select conductor in the third wiring layer.

A magnetic random access memory (MRAM) array formed by a method, comprising:

• forming a first wiring layer of approximately parallel word conductors using a first reticle;
• forming a second wiring layer of approximately parallel bit conductors using a second reticle such that the bit conductors of the second wiring layer cross with the word conductors of the first wiring layer at a number of intersections;
• forming a third wiring layer of approximately parallel select conductors using a third reticle such that the select conductors of the third wiring layer cross the word conductors of the first wiring layer and the bit conductors of the second wiring layer at the number of intersections;
• and
• forming a layer of magnetic storage elements, wherein the magnetic storage elements are proximately located to the intersections and are magnetically coupled to magnetic fields generated when current flows in word lines, when current flows in bit lines, and when current flows in select lines,
• wherein at least one of the first wiring layer, the second wiring layer and the third wiring layer is formed so as to be non-orthogonal with respect to a remaining at least one of the first wiring layer, the second wiring layer and the third wiring layer, and
• wherein a desired magnetic storage element is written using three magnetic fields, wherein the three magnetic fields used to write the desired magnetic storage element include a first magnetic field produced by an energized word conductor in the first wiring layer, a second magnetic field produced by an energized bit conductor in the second wiring layer, and a third magnetic field produced by an energized select conductor in the third wiring layer.