Semiconductor devices having self aligned semiconductor mesas and contact layers

A semiconductor device comprising:

• a semiconductor structure including a mesa having mesa sidewalls and a mesa surface;
• a metal contact layer on the mesa surface, the metal contact layer having sidewalls and a contact surface opposite the mesa surface, the metal contact layer extending across substantially an entirety of the mesa surface;
• and
• an insulating passivation layer on the mesa sidewalls and on portions of the metal contact layer sidewalls adjacent the mesa surface, wherein the insulating passivation layer exposes substantially an entirety of the contact surface of the metal contact layer;
• wherein the metal contact layer sidewalls are inwardly beveled with a width of the metal contact layer adjacent the mesa surface being greater than a width of the metal contact layer opposite the mesa surface,
• wherein the insulating passivation layer extends directly onto the inwardly beveled sidewalls of the metal contact layer opposite the mesa surface.

A semiconductor device comprising:

• a semiconductor structure including a mesa having mesa sidewalls and a mesa surface;
• a metal contact layer on the mesa surface, the metal contact layer having sidewalls and a contact surface opposite the mesa surface, the metal contact layer extending across substantially an entirety of the mesa surface;
• and
• an insulating passivation layer on the mesa sidewalls and directly on portions of the metal contact layer sidewalls adjacent the mesa surface, wherein the insulating passivation layer exposes substantially an entirety of the contact surface of the metal contact layer:
• wherein the mesa sidewalls of the semiconductor structure have a first slope relative to the mesa surface and portions of the metal contact layer sidewalls directly on the insulating passivation layer have a second slope relative to the mesa surface wherein the second slope is less than the first slope.