Self-pulsation nitride semiconductor laser device and method for fabricating the same

A self-pulsation nitride semiconductor laser device comprising:

• an active layer sandwiched between cladding layers;
• and
• a current blocking layer having an opening for confining a current flowing to said active layer,
• wherein a regrown layer made of a nitride semiconductor doped with a p-type impurity is formed on said current blocking layer for covering said opening of said current blocking layer,
• a portion of said regrown layer buried in said opening of said current blocking layer has an n-type conductivity,
• said portion is disposed to be adjacent to a side face of said opening, and said portion has a given width,
• one side of said given width that is located near the active layer is longer than the opposite side of said given width, and
• an Al composition ratio in said portion is smaller than an Al composition ratio in said current blocking layer.