Address latch circuit of semiconductor memory device

Abstract

An address latch circuit of a semiconductor memory device is provided. The address latch circuit includes a first address latch part, which latches a first address signal fed from outside according to a first address latch signal and outputs a second address signal. An address shift part shifts the second address signal according to a divided clock, which is divided from an external clock, and a write latency signal, and outputs a third address signal. A second address latch part latches the third address signal according to a second address latch signal and outputs a fourth address signal.

Dependencies are inferred from the claim text.