Memory device and method of operating such a memory device

A memory device comprising:

• a plurality of memory cell means arranged in at least one column, during a write operation a data value being written to an addressed memory cell means within a selected column from said at least one column;
• a supply voltage line means associated with each of said at least one columns, the supply voltage line means being connectable to a first voltage source means for providing a supply voltage at a first voltage level to the associated column;
• threshold means connected to a second voltage source means having a second voltage level, the threshold means having a threshold voltage;
• and
• control means, responsive to the write operation, for disconnecting the supply voltage line means for the selected column from the first voltage source means for a predetermined period of the write operation, and during said predetermined period for connecting the threshold means to the supply voltage line means for the selected column, such that the supply voltage to the addressed memory cell means transitions to an intermediate voltage level determined by the threshold voltage of the threshold means.

A method of operating a memory device, the memory device having a plurality of memory cells arranged in at least one column, during a write operation a data value being written to an addressed memory cell within a selected column from said at least one column, the memory device further having a supply voltage line associated with each of said at least one columns, the supply voltage line being connectable to a first voltage source to provide a supply voltage at a first voltage level to the associated column;

• the method comprising the steps of:
• responsive to the write operation, disconnecting the supply voltage line for the selected column from the first voltage source for a predetermined period of the write operation;
• and
• during said predetermined period, connecting the supply voltage line for the selected column to threshold circuitry, the threshold circuitry having a threshold voltage and being connected to a second voltage source having a second voltage level;
• whereby during said predetermined period the supply voltage to the addressed memory cell transitions to an intermediate voltage level determined by the threshold voltage of the threshold circuitry.